By Zhao Weiwei and Pan Xiaomei, Hefei Institutes of Physical Sciences, Chinese Academy of Sciences
According to research published in Journal of Physical Chemistry LettersProfessor Ding Junfeng of the Institute of Solid State Physics (ISSP), Hefei Institutes of Physical Sciences, together with Professor Wang Weihua of Nankai University, explained the high-pressure structure of CrSiTe3Ultra-low frequency Raman spectroscopy highlighted the detection of interlayer coupling on two-dimensional (2D) van der Waals materials.
Two-dimensional magnetic materials have attracted great interest due to their highly tunable physical properties and potential applications in novel x-electronics. Some of them can still show intrinsic long-range magnetic ordering when exfoliated even in a few layers, such as the ferromagnetic semiconductor CrSiTe.3 Layered structure.
Both superconductivity and ferromagnetic enhancement, which typically compete for orders, have been observed in CrSiTe3 under high pressure. However, the high stress structure of CrSiTe3 It is still not clear, which poses obstacles in understanding the new pressure-induced physics.
In this paper, after combining Raman spectra with first-principles calculations, the joint team elucidated the high-pressure structure of CrSiTe.3.
“This was the first time that a new respiration position of the interstitial layer was located at approximately 42.1 cm-1 observed in CrSiTe3said Pan Xiaomi, first author of the paper.
Prominent changes in the Raman spectra suggested a phase transition from R3̅ phase to R3 phase accompanied by a marked enhancement of the Curie temperature at high pressure, which was supported by theoretical analyses. The calculated phonon modes of R3 symmetry were in good agreement with the Raman bands originating from CrSiTe.3 under high pressure.
Xiaomei Pan et al, Pressure-induced structural phase transition and enhanced interfacial coupling in two-dimensional CrSiTe3 ferromagnets, Journal of Physical Chemistry Letters (2023). DOI: 10.1021/acs.jpclett.3c00507
Provided by Hefei Institutes of Physical Sciences, Chinese Academy of Sciences
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